| 摘要 |
A semiconductor or nonconductor vapor is generated by sputtering targets 11 U, 11 D in a first sputtering chamber 10 , while a metal vapor is generated by sputtering targets 21 U, 21 D in a second sputtering chamber 20 . The semiconductor or nonconductor vapor and the metal vapor are aggregated to clusters during travelling through a cluster-growing tube 32 and injected as a cluster beam to a high-vacuum deposition chamber 30 , so as to deposit composite clusters on a substrate 35 . The produced composite clusters are useful in various fields due to high performance, e.g. high-sensitivity sensors, high-density magnetic recording media, nano-magnetic media for transportation of medicine, catalysts, permselective membranes, optical-magnet sensors and low-loss soft magnetic materials.
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