| 摘要 |
Two Hall element forming arrangements are formed on a semiconductor substrate. Each Hall element forming arrangement includes a Hall element that is formed in a principal surface of the semiconductor substrate. A base is formed separately from the semiconductor substrate. Then, the base is disposed at a rear surface of the semiconductor substrate and holds the semiconductor substrate and the Hall element forming arrangements. The base includes a holding surface, which holds the semiconductor substrate, and two slant surfaces, each of which is slanted relative to the holding surface. Each Hall element forming arrangement is held on a corresponding one of the at least one slant surface of the base.
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