<p>[PROBLEMS] To produce a silicon single crystal ingot free from point-defect aggregate over almost its entire length without decreasing pure margin. [MEANS OF SOLVING PROBLEMS] A heat shielding member (36) is provided with a bulging unit (41) provided at the lower part of a tube part (37) to swell in the inner side of the tube part and having a heat storing member (47) provided inside thereof. An silicon single crystal ingot (25) is lifted such that the flow rate of an inert gas flowing down between the bulging unit (41) at the heat shielding member (36) and the ingot (25) when a top-side ingot (25a) of the silicon single crystal ingot (25) is lifted is larger than the flow rate of an inert gas flowing down between the bulging unit (41) and the ingot (25) when a bottom-side ingot (25b) of the silicon single crystal ingot (25) is lifted. Alternatively, the intensity of a cusp magnetic field (53) when the top-side ingot (25a) is lifted is set larger than that of the cusp magnetic field (53) when the bottom-side ingot (25b) is lifted.</p>
