| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the dampproofness of a chip-sized semiconductor device, and to prevent the breaking of the semiconductor device. <P>SOLUTION: The chip-sized semiconductor device has a surface protective film 3 coating the top face of the forming section of an element for a semiconductor substrate 1, electrodes 2 exposed from windows bored to the surface protective film 3, and an upper-layer resin 7 coating the top face and functioning as a package. The semiconductor device further has solder bumps 5 and 6 formed on the electrodes 2 and exposed from the upper-layer resin 7 to the outside. In the semiconductor device, a stepped section 1a is formed to the upper section of the periphery of the semiconductor substrate 1, and the stepped section 1a is coated with the upper-layer resin 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
