| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of performing a high accuracy-plasma processing by evenly applying the plasma without deteriorating processing efficiency such as etching rate to a big work and whose productive efficiency is high. <P>SOLUTION: The plasma processing apparatus is for subjecting plasma processing to the work 5 planarly formed, and is provided with a load lock chamber 10 for supplying/discharging the work 5, a plasma processing chamber 40 which is connected in a series through the chamber 10 and a gate valve 42 and is provided so as to allow the work to be carried in and out between the load lock chamber and the chamber 40, a carrier 50 which planarly supports the work and is transferably provided together with the work 5 between the chamber 10 and the chamber 40, and a transfer mechanism 60 which transfers the work to the chamber 10 and the chamber 40 by reciprocating the carrier between a support means for supporting the carrier 50 each provided and the mechanism 60. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
