OXIDATION SILICON DEPOSITING METHOD, EQUIPMENT, STI, MANUFACTURED BY THE METHOD AND THE EQUIPMENT, AND INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an STI which is great in aspect ratio and formed of a high quality SiO2film. SOLUTION: This method comprises processes of introducing an oxygen gas and a chlorine gas 18 into an evacuated chamber 1; generating gas plasma 14 by supplying electric power to a plasma antenna 27 simultaneously; mainly generating a precursor 15 by etching an etched component 20 made of silicon with a chlorine gas radical after that; adsorbing the precursor 15 to a substrate 3 by the adjustment of a temperature control means 6; and embedding the SiO2film in a pattern for separation which is high in aspect ratio in such a way that the precursor 15 adsorbed to the substrate is reduced by the chlorine gas radical, and that the precursor is reacted to form the SiO2film by being oxidized with the oxidation gas radical simultaneously after that. COPYRIGHT: (C)2005,JPO&NCIPI