METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using an engineering method which is a so-called dual damascene method, wherein a degradation and migration of copper forming a lower layer wiring part are prevented to prevent a contact failure between the lower layer wiring part and an upper layer wiring part, thereby enhancing a product yield. SOLUTION: The method for manufacturing the semiconductor device comprises steps of: polishing and cleaning an embedded surface in the lower layer wiring part composed of copper on a semiconductor substrate, forming an insulating film on the lower layer wiring part; forming a via hole penetrating the insulating film and a wiring trench by plasma etching; cleaning the lower layer wiring part exposed; and embedding the upper layer wiring part composed of copper in the via hole and wiring trench. As etching conditions when the insulating film formed in the lower layer wiring part is etched, an electronic density is 5×1010/cm3or below, and an oxygen gas amount is controlled to be 35% or above of all gas flow rates except for a diluted gas. COPYRIGHT: (C)2005,JPO&NCIPI