Polishig fluid for metallic films and method for producing semiconductor substrate using the same

摘要

A polishing fluid for metallic films, wherein the etching rate is 10 nm/min. or less, the polishing rate under a load of 10 KPa is 200 nm/min. or more, and the contrast, a ratio of the above-mentioned polishing rate to the etching rate, is 20 or more; and a method for producing a semiconductor substrate using the same.