发明名称 |
METHOD OF FORMING METAL OXIDE FILM AND MICROWAVE POWER SOURCE UNIT FOR USE IN THE METHOD |
摘要 |
A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method. <IMAGE>
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申请公布号 |
EP1561840(A1) |
申请公布日期 |
2005.08.10 |
申请号 |
EP20030751402 |
申请日期 |
2003.10.09 |
申请人 |
TOYO SEIKAN KAISYA, LTD. |
发明人 |
NAMIKI, TSUNEHISA;IEKI, TOSHIHIDE;KURASHIMA, HIDEO;INAGAKI, HAJIME;KOBAYASHI, AKIRA;YAMADA, KOJI |
分类号 |
C23C16/02;C23C16/04;C23C16/40;C23C16/511;C23C16/515;H01J37/32;(IPC1-7):C23C16/40;B32B9/00;C08J7/06;H05H1/46 |
主分类号 |
C23C16/02 |
代理机构 |
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地址 |
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