发明名称 |
Semiconductor component and method of manufacture |
摘要 |
A semiconductor component and a method for manufacturing the semiconductor component that mitigates electromigration and stress migration in a metallization system of the semiconductor component. A hardmask is formed over a dielectric layer and an opening is etched through the hardmask and into the dielectric layer. The opening is lined with a barrier layer and filled with an electrically conductive material. The electrically conductive material is planarized, where the planarization process stops on the barrier layer. Following planarization, the electrically conductive material is recessed using either an over-polishing process with highly selective copper slurry or a wet etching process to partially re-open the filled metal-filled trench or via. The recess process is performed such that the exposed portion of the electrically conductive material is below the dielectric layer. A capping layer is then deposited on both the dielectric portion and the exposed metal interconnect portion of the electrically conductive material.
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申请公布号 |
US6927113(B1) |
申请公布日期 |
2005.08.09 |
申请号 |
US20030444353 |
申请日期 |
2003.05.23 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
SAHOTA KASHMIR S.;MARTIN JEREMY;HUANG RICHARD J.;XIE JAMES J. |
分类号 |
H01L21/768;H01L21/8238;H01L23/532;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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