发明名称 |
Magnetic memory with self-aligned magnetic keeper structure |
摘要 |
A magnetic tunneling junction (MTJ) memory cell is formed with a keeper structure on its upper conductor (write line). The keeper structure is formed by a self aligned process as three pieces: two vertical soft magnetic side pieces contacting an upper soft magnetic layer. The structure so formed completely surrounds an upper conductor and terminates on a horizontal extension of the MTJ sense layer.
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申请公布号 |
US6927075(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20030647718 |
申请日期 |
2003.08.25 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
GUO YIMIN |
分类号 |
G11C11/15;H01F10/32;H01F41/30;H01L43/08;H01L43/12;(IPC1-7):H01L21/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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