发明名称 |
Method of applying cladding material on conductive lines of MRAM devices |
摘要 |
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.
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申请公布号 |
US6927072(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20020093909 |
申请日期 |
2002.03.08 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MOLLA JAYNAL A.;D'URSO JOHN;KYLER KELLY;ENGEL BRADLEY N.;GRYNKEWICH GREGORY W.;RIZZO NICHOLAS D. |
分类号 |
H01L27/105;C25D5/12;G11C11/15;G11C11/16;H01L21/00;H01L21/4763;H01L21/8246;H01L27/22;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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