GROWTH METHOD OF ALUMINUM-CONTAINING NITRIDE SEMICONDUCTOR SINGLE CRYSTAL,申请号KR20030095170-传众专利搜索

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发明名称	GROWTH METHOD OF ALUMINUM-CONTAINING NITRIDE SEMICONDUCTOR SINGLE CRYSTAL
摘要
申请公布号	KR100506739(B1)	申请公布日期	2005.08.08
申请号	KR20030095170	申请日期	2003.12.23
申请人		发明人
分类号	C30B29/38;H01L21/20;C30B23/00;C30B25/02;C30B25/04;C30B29/40;H01L33/32;H01L33/34;(IPC1-7):H01L21/20	主分类号	C30B29/38
代理机构		代理人
主权项
地址

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