| 摘要 |
A nonvolatile ferroelectric memory device having a multi control function can amplify sensing voltage levels in a sensing critical voltage and determine a plurality of cell data when a plurality of reference timing strobes are applied on a basis of a time axis. In a read mode, a plurality of read data applied from a cell array block are stored in a read/write data register array unit through a common data bus unit. In a write mode, a plurality of read data stored in the read/write data register array unit or input data applied from a timing data buffer unit are stored in a cell, array block through the common data bus unit. Here, since a plurality of sensing voltage levels are set in cell data, a plurality of sensed data bits can be stored in one cell. |
