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发明名称
Method of forming a high resistive region in a semiconductor device
摘要
申请公布号
KR100506192(B1)
申请公布日期
2005.08.03
申请号
KR20030029746
申请日期
2003.05.12
申请人
发明人
分类号
H01L21/76;H01L21/02;H01L21/762;H01L21/822;H01L27/04;H01L27/08;(IPC1-7):H01L21/76
主分类号
H01L21/76
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代理人
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