| 发明名称 |
ELECTRODE FOR p-TYPE SiC |
| 摘要 |
An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt). <IMAGE> |
| 申请公布号 |
EP1424725(A4) |
申请公布日期 |
2005.08.03 |
| 申请号 |
EP20020760799 |
申请日期 |
2002.09.02 |
| 申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
NAKATSUKA, OSAMU;KONISHI, RYOHEI;YASUKOCHI, RYUICHI;KOIDE, YASUO;MURAKAMI, MASANORI;SHIBATA, NAOKI |
| 分类号 |
C23C14/14;H01L21/04;H01L21/28;H01L29/24;H01L29/45;H01L29/861;H01L29/868 |
主分类号 |
C23C14/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
