Phase change memory device capable of conducting Initial Firing effectively and method thereof,申请号KR20030062546-传众专利搜索

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发明名称	Phase change memory device capable of conducting Initial Firing effectively and method thereof
摘要
申请公布号	KR100505709(B1)	申请公布日期	2005.08.03
申请号	KR20030062546	申请日期	2003.09.08
申请人		发明人
分类号	G11C13/02;G11C11/00;G11C16/20;(IPC1-7):G11C13/02	主分类号	G11C13/02
代理机构		代理人
主权项
地址

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