FERROELECTRIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME,申请号KR20030008202-传众专利搜索

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发明名称	FERROELECTRIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
申请公布号	KR100504693(B1)	申请公布日期	2005.08.03
申请号	KR20030008202	申请日期	2003.02.10
申请人		发明人
分类号	H01L27/105;H01L21/8246;H01L27/115;H01L29/76;(IPC1-7):H01L27/105	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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