发明名称 |
COMPOSITION FOR FORMING ANTIREFLECTION FILM FOR LITHOGRAPHY |
摘要 |
<p>There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.</p> |
申请公布号 |
EP1560070(A1) |
申请公布日期 |
2005.08.03 |
申请号 |
EP20030751376 |
申请日期 |
2003.10.08 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
KISHIOKA, TAKAHIRO;MIZUSAWA, KEN-ICHI;ENOMOTO, TOMOYUKI;SAKAMOTO, RIKIMARU;NAKAYAMA, KEISUKE;KAWAMURA, YASUO |
分类号 |
G03F7/11;C07D251/34;G03F7/038;G03F7/09;H01L21/027;(IPC1-7):G03F7/11 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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