发明名称 |
LDMOS device with isolation guard rings |
摘要 |
A method of forming a LDMOS semiconductor device and structure for same. A preferred embodiment comprises forming a first guard ring around and proximate the drain of a LDMOS device, and forming a second guard ring around the first guard ring. The first guard ring comprises a P+ base guard ring, and the second guard ring comprises an N+ collector guard ring formed in a deep N-well, in one embodiment. The first guard ring and second guard ring prevent leakage current from flowing from the drain of the LDMOS device to the substrate.
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申请公布号 |
US6924531(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030676703 |
申请日期 |
2003.10.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN FU-HSIN;LIU RUEY-HSIN |
分类号 |
H01L21/336;H01L27/105;H01L29/10;H01L29/76;H01L29/78;H01L31/062;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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