发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.
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申请公布号 |
US6924536(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030372963 |
申请日期 |
2003.02.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NISHIYAMA AKIRA;INUMIYA SEIJI |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/316;H01L21/336;H01L29/51;(IPC1-7):H01L31/119 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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