发明名称 |
Method for forming a semiconductor |
摘要 |
A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a forming process of a non-crystalline silicon film by a low temperature gas phase chemical reaction, a process of a heat annealing to produce a lot of dangling bonds of silicon, so as to draw out hydrogen from said non-crystalline silicon film, and a process of applying a laser irradiation to said non-crystal silicon film having a lot of dangling bond of silicon are conducted.
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申请公布号 |
US6924212(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030453689 |
申请日期 |
2003.06.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONYONG;KUSUMOTO NAOTO |
分类号 |
C23C16/24;C23C16/56;H01L21/00;H01L21/20;H01L21/205;H01L21/268;H01L21/336;(IPC1-7):H01L21/20 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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