| 摘要 |
The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate ( 1 ), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer ( 3 ) doped with a type of conductivity opposite to that of the substrate, the upper surface of the semiconductor layer bearing a first solder bump ( 23 ). The diode comprises a second zone including on the substrate a thick strip conductor ( 16 ) bearing at least second solder bumps ( 24 ), said first and second solder bumps defining a plane parallel to the substrate plane.
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