发明名称 |
Method of forming a memory device and semiconductor device |
摘要 |
A novel technique to quench electrical defects in CVD Al<SUB>2</SUB>O<SUB>3 </SUB>layers is disclosed. A small amount of silicon dopant to the aluminum oxide film reduces the leakage current as well as the gap interface trap density at the dielectric/silicon interface. The implanted silicon gives a better interface and improves the leakage characteristics of the dielectric.
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申请公布号 |
US6924186(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20040814640 |
申请日期 |
2004.04.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU SUKESH;PRALL KIRK D. |
分类号 |
H01L21/28;H01L21/316;H01L21/336;H01L29/51;(IPC1-7):H01L21/828 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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