发明名称 |
Method of making a semiconductor device with dummy diffused layers |
摘要 |
A semiconductor device, including a dummy diffused layer in the upper part of a substrate, has its noise immunity improved. The dummy diffused layer is formed between analog and digital blocks to eliminate dishing, which usually occurs during a CMP process for defining STI regions. The surface of the dummy diffused layer is covered with an anti-silicidation film at least partially and a dummy gate electrode so as not to be silicided. The dummy gate electrode can be formed along with a normal gate electrode for a transistor.
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申请公布号 |
US6924187(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030460172 |
申请日期 |
2003.06.13 |
申请人 |
MATSUSHITA ELECTRICAL INDUSTRIAL CO., LTD. |
发明人 |
ISHIKURA SATOSHI;IIJIMA YUKIO;MINAKUCHI NOBUAKI |
分类号 |
H01L21/76;H01L21/761;H01L21/762;H01L21/822;H01L21/8238;H01L27/04;H01L27/08;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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