发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, source/drain regions are constructed by a lamination layer structure including a first conductive layer (n<SUP>+</SUP> layer), a second conductive layer (n<SUP>-</SUP> layer) having resistance higher than the first conductive layer, and an intrinsic or substantially intrinsic semiconductor layer (i layer). At this time, the n<SUP>-</SUP> layer acts as LDD region, and the i layer acts as an offset region is a film thickness direction.
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申请公布号 |
US6924528(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030428092 |
申请日期 |
2003.05.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;FUKUNAGA TAKESHI |
分类号 |
G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/76;H01L29/04 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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