| 摘要 |
A method for instantaneously detecting flare noise within patterns of the semiconductor device, which includes the steps of preparing a mask having a plurality of exposed areas having different light energy levels when being photo exposed and providing a plurality of dummy patterns with different sizes for detecting flare noises in each exposed area; forming dummy patterns on a wafer through a photolithography process with the mask; and detecting the flare noise by comparing the dummy patterns in each exposed area with an optical microscope.
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