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发明名称
半导体元件形成技术
摘要
本发明的第一型态系为一种用于形成半导体元件之方法。此方法包括在一基材中形成一立体图案以及依据半导体元件的所需要特征将至少一材料沉积在基材中
申请公布号
TW200525598
申请公布日期
2005.08.01
申请号
TW093122384
申请日期
2004.07.27
申请人
惠普研发公司
发明人
梅平
分类号
H01L21/02
主分类号
H01L21/02
代理机构
代理人
恽轶群;陈文郎
主权项
地址
美国
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