| 摘要 |
1. The method of producing monolithic semiconductor-dielectric plates consists in isolating active structure areas. Unique characteristics: Dielectric areas, running across the entire thickness of a semiconductor plate, are created to isolate active structure areas. In the first stage of the structure isolation, the areas (2) with the depth exceeding the target structure depth are etched in the top surface of the semiconductor plate (1). In the second stage, the etched areas (2) are filled with a dielectric (3). Then, the formerly prepared dielectric areas (3) are exposed on the bottom side of the plate. |
