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发明名称
Verfahren zur Herstellung von Halbleiterkörpern mit mindestens einer P-N-Grenzschicht
摘要
申请公布号
CH352054(A)
申请公布日期
1961.02.15
申请号
CHD352054
申请日期
1956.03.29
申请人
GENERAL ELECTRIC COMPANY
发明人
NOEL HALL,ROBERT
分类号
H01L21/00;H01L21/208
主分类号
H01L21/00
代理机构
代理人
主权项
地址
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