| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a p-type electrode material from being peeled off when Ag is used as the p-type electrode material for a p-type nitride semiconductor layer. <P>SOLUTION: A p-type electrode for a nitride semiconductor light emitting element of an electrode 7 formed on a p-type semiconductor layer 4 of a group III nitride semiconductor light emitting element comprises a first Ag layer 8 for its ohmic electrode with the p-type semiconductor layer 4, a barrier metal layer 9 disposed on the first Ag layer 8, a second Ag layer 10 for light reflection disposed on the barrier metal layer 9, and a cover metal layer 11 disposed on the second Ag layer 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
