MAGNETORESISTIVE EFFECT ELEMENT, ITS MANUFACTURING METHOD AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element having a magnetic layer with a good crystallinity and superior magnetic characteristics, and to provide its manufacturing method. SOLUTION: The TMR element 30 is a magnetoresistive effect element having a recording layer 31, an insulation layer 33 and a fixed magnetic layer 32 laminated one above another on a substrate 15. The recording layer 31 has a structure formed on the substrate 15 through a transition metal oxide layer 42 having a specified orientation plane. A buffer layer 40 is preferably provided on the lower side of the transition metal oxide layer 42. COPYRIGHT: (C)2005,JPO&NCIPI