发明名称 Porogen material
摘要 A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.
申请公布号 US2005161763(A1) 申请公布日期 2005.07.28
申请号 US20050071621 申请日期 2005.03.03
申请人 XU CHONGYING;BOROVIK ALEXANDER S.;BAUM THOMAS H. 发明人 XU CHONGYING;BOROVIK ALEXANDER S.;BAUM THOMAS H.
分类号 H01L21/316;(IPC1-7):H01L29/00;H01L21/31 主分类号 H01L21/316
代理机构 代理人
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