发明名称 |
Method of fabricating semiconductor device |
摘要 |
A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.
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申请公布号 |
US2005164434(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20050088644 |
申请日期 |
2005.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ARAKAWA ETSUKO;KATO KIYOSHI;KUROKAWA YOSHIYUKI |
分类号 |
H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L21/00;H01L31/036 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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