发明名称 |
Method for forming semiconductor device |
摘要 |
A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
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申请公布号 |
US2005164494(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20050090885 |
申请日期 |
2005.03.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAGAWA HIDEO;SASAGO MASARU;HIRAI YOSHIHIKO |
分类号 |
G03F7/00;H01L21/027;H01L21/312;H01L21/316;H01L21/44;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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