| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to selectively form a SiGe perpendicular optical path and SiGe perpendicular optical path structure for IR photodetection. SOLUTION: The method of this invention comprises a step to form the front surface of a Si substrate, step to form Si features perpendicular to the front surface of the Si substrate such as a trench, via and pillar, and step to selectively form the SiGe optical path in a pile on the Si perpendicular features. In some aspects, the front surface of the Si substrate is formed on a primary plane, while the Si perpendicular features have a wall (side wall) perpendicular to the front surface of the Si substrate and front surface on a secondary plane parallel to the primary plane. The step to selectively form the SiGe optical path in a pile on the Si perpendicular features includes a step to form the SiGe perpendicular optical path in a pile on the wall of the perpendicular features. COPYRIGHT: (C)2005,JPO&NCIPI
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