| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser device of end surface emitting type comprising a nitride semiconductor (for example, In<SB>x</SB>Al<SB>y</SB>Ga1-x-yN, x≥0, y≥0, x+y≤1) of which a laser oscillation threshold value is small and the productivity is high. SOLUTION: In order to achieve the purpose, the laser device is constructed to form a current constrictive layer by injecting ions into a p-type layer in the laser device of end surface emitting type comprising the nitride semiconductor having a structure where an active layer is sandwiched between a n-type layer and the p-type layer. COPYRIGHT: (C)2005,JPO&NCIPI
|
