| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor ferroelectric film wherein its ferroelectric characteristic is improved by suppressing the reducing of its residual polarization, the lowering of its crystallization temperature, and the increasing of its leakage current; and it uses a PZT or SBT film contributing to the increases of the operational speed and the capacity of a ferroelectric memory element. SOLUTION: A capacitor 1 has a base 19, a first electrode film 14 disposed on the base 19, an insulation film 15 disposed on the first electrode film 14, and a second electrode film 16 disposed on the insulation film 15. The insulation film contains such a ferroelectric material as PZT (Pb (Zr, Ti)O<SB>3</SB>) and SBT (SrBi<SB>2</SB>Ta<SB>2</SB>O<SB>9</SB>) and contains silicon dioxide. Since the orientation quality of the crystal of the ferroelectric material is improved and the spontaneous polarization quality of the insulation film 15 is made high and its leakage current is reduced by it containing silicon dioxide, the capacitor 1 has a very high suitability as the memory element of a non-volatile memory device. COPYRIGHT: (C)2005,JPO&NCIPI
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