| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which avoids the formation of a damaged layer on the side wall of a wiring trench and also increasing a damaged layer formed on the interface in a dry etching process and an ashing process. SOLUTION: The method comprises steps for forming first, second and third insulation films 2, 3 and 4, an antireflection film 5 and a resist film 6 one above another on lower layer wiring 1, dry-etching the third and second insulation films 4, 3 with the resist film 6 used as a mask, then ashing the resist film 6 and the antireflection film 5 to be removed, and dry-etching the first insulation film 2 with the third insulation film 4 used as a mask to form a wiring trench extending to the lower wiring 1. The dry etching is done with at least either hydrogen gas or inert gas added to a fluorocarbonic gas. The ashing uses at least either hydrogen gas or inert gas. COPYRIGHT: (C)2005,JPO&NCIPI
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