| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring a strain of a thin film crystal layer in a sample having the strained thin film crystal layer and a support layer for supporting the thin film crystal layer. SOLUTION: The apparatus for measuring the strain of the thin film crystal layer is provided with excitation light sources 1-5 for generating visible light and ultraviolet light as excitation light along a common optical axis. A stage 12 is provided in a microscope chamber 7 and supports the sample 11. Projection optical systems 8, 9, 10 project the excitation light onto the sample 11 supported on the stage 12. A spectral means is provided in a spectroscope 18, and diffracts Raman scattering light from the sample 11. A calculation means calculates states of the strain and the support layer from an output from the spectral means. COPYRIGHT: (C)2005,JPO&NCIPI
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