发明名称 |
Structure and method of hyper-abrupt junction varactors |
摘要 |
A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.
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申请公布号 |
US2005161770(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20040004877 |
申请日期 |
2004.12.07 |
申请人 |
COOLBAUGH DOUGLAS D.;FURKAY STEPHEN S.;JOHNSON JEFFREY B.;RASSEL ROBERT M.;SHERIDAN DAVID C. |
发明人 |
COOLBAUGH DOUGLAS D.;FURKAY STEPHEN S.;JOHNSON JEFFREY B.;RASSEL ROBERT M.;SHERIDAN DAVID C. |
分类号 |
H01L29/93;H01L29/94;(IPC1-7):H01L29/93;H01L27/108 |
主分类号 |
H01L29/93 |
代理机构 |
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