发明名称 |
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
摘要 |
This invention pertains to e lectronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
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申请公布号 |
US2005164475(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20040768747 |
申请日期 |
2004.01.23 |
申请人 |
PECKERAR MARTIN;HENRY RICHARD;KOLESKE DANIEL;WICKENDEN ALMA;EDDY CHARLES R.JR.;HOLM RONALD;TWIGG MARK E. |
发明人 |
PECKERAR MARTIN;HENRY RICHARD;KOLESKE DANIEL;WICKENDEN ALMA;EDDY CHARLES R.JR.;HOLM RONALD;TWIGG MARK E. |
分类号 |
C30B25/04;C30B29/40;H01L21/20;H01L21/205;H01L29/20;(IPC1-7):C30B1/00 |
主分类号 |
C30B25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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