发明名称 SPUTTERING TARGET AND PHOTOMASK BLANK MANUFACTURING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering target or the like to deposit an optical semi-permeable film containing metal and silicon in which particles, foreign matters and defects are less liable to generate even when the target is continuously used for sputtering. <P>SOLUTION: The sputtering target deposits an optical semi-permeable film containing at least metal and silicon on a translucent substrate. The sputtering target consists substantially of metal and silicon, and silicon is contained more than the stoichiometrically stable composition of the metal and silicon, and is present as metal silicide particles and silicon particles. The grain size and/or the granularity distribution of the metal silicide particles are set so that the defect generation ratio of the optical semi-permeable film is equal to or less than a predetermined value. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005200688(A) 申请公布日期 2005.07.28
申请号 JP20040006738 申请日期 2004.01.14
申请人 HOYA CORP 发明人 SUZUKI TOSHIYUKI;ISHIHARA SHIGENORI
分类号 C04B35/58;C23C14/34;G03F1/32;G03F1/68;H01L21/027 主分类号 C04B35/58
代理机构 代理人
主权项
地址
您可能感兴趣的专利