| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation method capable of precisely estimating imager characteristics to a micro-imager. SOLUTION: The first analysis of AS implantation is made by a two-dimensional Monte Carlo simulation (step S1), a second analysis is made for analyzing an impurity profile after a thermal process by two-dimensional thermal diffusion simulation with the first analysis results 100, 200 as input information (step S2), a diffusion calculation is made based on a Gaussian function on the basis of the second analysis result 400 to obtain the impurity profile after three-dimensional thermal diffusion (step S3), and the impurity profile is set after the three-dimensional thermal diffusion to be input information, and the device simulation of a semiconductor device is made using a physical model, thus precisely estimating the characteristics of the imager to the micro-imager. COPYRIGHT: (C)2005,JPO&NCIPI
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