ETCHING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a vacuum processing system capable of processing a large number of objects at high rate and capable of ensuring in-plane uniformity of a processed object. SOLUTION: The vacuum processing system comprises a vacuum processing chamber 3, a first gas introducing section 30 arranged to introduce first processing gas in radical state into the vacuum processing chamber 3 thence to a semiconductor wafer 10, and a second gas introducing section 40 arranged to introduce second processing gas reacting on the first processing gas into the vacuum processing chamber 3 thence to the semiconductor wafer 10. The second gas introducing section 40 has two shower nozzles 41 and 42 located on the opposite sides of an introduction pipe 31 provided in the first gas introducing section 30. COPYRIGHT: (C)2005,JPO&NCIPI