发明名称 LOW STRESS ELECTROLESS NICKEL PLATING
摘要 PROBLEM TO BE SOLVED: To solve the problem wherein it is impossible to convey a wafer by an air suction system and it is difficult to work the wafer in a succeeding process because of that when nickel plating is applied to a wafer, a nickel film shrinks, thus shrinkage stress is applied to an electrode part in a base material tightly stuck thereto to cause the warpage of the wafer. SOLUTION: Molybdenum is added to an electroless nickel bath, and molybdenum is precipitated into a deposited nickel film, thus the generation of internal stress in the film is suppressed, and the warpage of a wafer can be stopped. The stress is large after heat treatment compared with that in plating, but, by incorporating molybdenum into the nickel film, it is effective also on heat treatment. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005200707(A) 申请公布日期 2005.07.28
申请号 JP20040008655 申请日期 2004.01.16
申请人 NOGE DENKI KOGYO:KK;KANTO GAKUIN UNIV SURFACE ENGINEERING RESEARCH INSTITUTE;JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 UMEDA YASUSHI;IZAWA KAZUHIKO;KOIWA KENTARO;HONMA HIDEO;OYAMADA JINKO
分类号 C23C18/48;C23C18/31;C23C18/32;(IPC1-7):C23C18/48 主分类号 C23C18/48
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