| 摘要 |
A semiconductor device comprises a booster circuit portion including a plurality of first switching elements connected in series from an output portion and a plurality of first capacitors whose one ends are connected between respective adjacent ones of the first switching elements, the booster circuit portion being inputted with clock signals from the other ends of the first capacitors to output a boosted voltage from the output portion; and a voltage converting circuit portion comprising a plurality of boosting stages each of which includes a second capacitor whose one end is connected to a first voltage source via a second switching element and whose other end is connected to a reference voltage via a third switching element, said second capacitor being charged on the basis of a voltage difference between the first voltage source and the reference voltage, and comprising a plurality of fourth switching elements each of which is provided at least between adjacent ones of the boosting stages to control the number of the second capacitors connected in series between a second power source and the other ends of the first capacitors on the basis of the voltages of the first and second voltage sources, said voltage converting circuit portion outputting clock signals with phases opposed to each other to adjacent ones of the first capacitors.
|
