摘要 |
A semiconductor device includes a base plate, at least one first conductive layer carried by the base plate, and a semiconductor constructing body formed on or above the base plate, and having a semiconductor substrate and a plurality of external connecting electrodes formed on the semiconductor substrate. An insulating layer is formed on the base plate around the semiconductor constructing body. A plurality of second conductive layers are formed on the insulating layer and electrically connected to the external connecting electrodes of the semiconductor constructing body. A vertical conducting portion is formed on side surfaces of the insulating film and base plate, and electrically connects the first conductive layer and at least one of the second conductive layers.
|