| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus capable of polishing a wafer film by exact thickness, shortening a cleaning time, and preventing a cleaning device from being contaminated by chemicals or the like which falls from a wafer. <P>SOLUTION: The substrate processing apparatus 1 includes a polishing device 10 and a cleaning device 20. The polishing device 10 includes an intermediate platen portion 100b where a polishing is carried out until a lower part film of the wafer is exposed by an end point detecting method, and a last platen portion 100c where the polishing is carried out to a setting thickness by a variable time system controlled by a closed loop. Furthermore, the cleaning device 20 includes: a cleaning module which cleans the wafer by demineralized water; a primitive chemical processing module which cleans the wafer with a brush by the chemicals containing hydrogen fluoride; an intermediate chemical processing module which cleans the wafer with the brush by the chemicals containing ammonia; a last chemical processing module which cleans the wafer by mixed chemicals containing the ammonia, hydrogen peroxide and the demineralized water; and a drying module which utilizes Marangoni effect. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
