发明名称 METHOD FOR MANUFACTURING QUANTUM WIRE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a quantum wire easily at low cost. SOLUTION: Polysilane is dissolved into a solvent to form a polysilane thin film 104 by a method of spin coating. Then, the polysilane thin film 104 is subjected to dry etching, thus forming a polysilane wire 105 since the undercut section of resist 103 becomes a mask. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005203410(A) 申请公布日期 2005.07.28
申请号 JP20040005245 申请日期 2004.01.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IDOTA TAKESHI;KAWASHIMA TAKAHIRO
分类号 H01L21/3065;H01L29/06;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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