发明名称 |
METHOD FOR MANUFACTURING QUANTUM WIRE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a quantum wire easily at low cost. SOLUTION: Polysilane is dissolved into a solvent to form a polysilane thin film 104 by a method of spin coating. Then, the polysilane thin film 104 is subjected to dry etching, thus forming a polysilane wire 105 since the undercut section of resist 103 becomes a mask. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005203410(A) |
申请公布日期 |
2005.07.28 |
申请号 |
JP20040005245 |
申请日期 |
2004.01.13 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
IDOTA TAKESHI;KAWASHIMA TAKAHIRO |
分类号 |
H01L21/3065;H01L29/06;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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